®
LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.9
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
2.7
2.4
- 0.5
- 0.5
- 1
TYP. *4 MAX.
UNIT
PARAMETER
Supply Voltage
Input High Voltage
VCC
3.3
5.5
VCC+0.5
0.6
V
V
V
V
*1
VIH
-
-
-
-
VCC=2.7~3.6V
VCC=4.5~5.5V
CC ≧ VIN ≧ VSS
CC ≧ VOUT ≧ VSS,
Output Disabled
*2
Input Low Voltage
VIL
0.8
1
Input Leakage Current
Output Leakage
Current
ILI
V
V
A
µ
ILO
- 1
-
1
A
µ
Output High Voltage
Output Low Voltage
VOH IOH = -1mA
2.4
3.0
-
20
15
10
-
V
V
mA
mA
mA
VOL
IOL = 2mA
-
-
-
-
0.4
50
45
40
-35
-55
-70
Cycle time = Min.
CE# = VIL , II/O = 0mA
Other pins at VIL or VIH
ICC
Average Operating
Power supply Current
Cycle time = 1 s
µ
ICC1
ISB
≦
-
3
10
mA
mA
CE# 0.2V and II/O = 0mA
other pins at 0.2V or VCC-0.2V
CE# = VIH, other pins at VIL or VIH
LL
-
-
-
1
1
1
3
20
30
A
µ
A
µ
LLE/LLI
SL*5
CE# ≧VCC-0.2V
Others at 0.2V or
CC - 0.2V
℃
℃
-
-
1
3
4
25
A
µ
µ
Standby Power
Supply Current
SLE*5
SLI*5
ISB1
1.5
A
40
V
SL
SLE/SLI
-
-
1
1
10
20
A
µ
A
µ
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25
5. This parameter is measured at VCC = 3.0V
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
MIN.
-
-
MAX
6
8
UNIT
pF
pF
CIN
CI/O
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
0.2V to VCC - 0.2V
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
3ns
1.5V
CL = 50pF + 1TTL, IOH/IOL = -1mA/2mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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