®
LY621024
128K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.7
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
4.5
2.4
- 0.2
- 1
TYP. *4
5.0
MAX.
5.5
VCC+0.3
0.6
UNIT
PARAMETER
Supply Voltage
VCC
V
V
V
*1
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIH
VIL
-
-
-
*2
ILI
V
V
CC ≧ VIN ≧ VSS
CC ≧ VOUT ≧ VSS,
Output Disabled
1
A
µ
ILO
- 1
-
1
A
µ
Output High Voltage
Output Low Voltage
VOH IOH = -1mA
2.4
-
-
-
-
V
V
VOL
IOL = 2mA
0.4
mA
Cycle time = Min.
CE# = VIL and CE2 = VIH
24
17
15
80
60
50
- 35
- 55
- 70
-
-
-
,
mA
mA
ICC
I
I/O = 0mA
Other pins at VIL or VIH
Cycle time = 1 s
Average Operating
Power supply Current
µ
≧
CE# = 0.2V and CE2 VCC-0.2V,
II/O = 0mA
ICC1
-
2
10
mA
Other pins at 0.2V or VCC - 0.2V
LL
-
-
2
2
15
30
A
A
µ
µ
LLE/LLI
CE# ≧VCC-0.2V
SL*5
℃
-
-
0.8
1
2
2
A
25
µ
µ
Standby Power
Supply Current
≦
or CE2 0.2V
ISB1
SLE*5
SLI*5
Others at 0.2V or
℃
A
40
VCC - 0.2V
SL
SLE/SLI
-
-
2
2
7
10
A
µ
A
µ
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical values are measured at VCC = VCC(TYP.) and TA = 25
5. This parameter is measured at VCC = 3.0V
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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