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LY6210248ML-55LLT 参数 Datasheet PDF下载

LY6210248ML-55LLT图片预览
型号: LY6210248ML-55LLT
PDF下载: 下载PDF文件 查看货源
内容描述: 1024K ×8位低功耗CMOS SRAM [1024K X 8 BIT LOW POWER CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 350 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY6210248  
1024K X 8 BIT LOW POWER CMOS SRAM  
Rev. 1.0  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VT1  
RATING  
-0.5 to 6.5  
-0.5 to VCC+0.5  
0 to 70(C grade)  
-40 to 85(I grade)  
-65 to 150  
1
UNIT  
V
Voltage on VCC relative to VSS  
Voltage on any other pin relative to VSS  
VT2  
V
Operating Temperature  
TA  
Storage Temperature  
Power Dissipation  
DC Output Current  
TSTG  
PD  
W
IOUT  
50  
mA  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is  
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
TRUTH TABLE  
CE#  
H
CE2  
X
OE#  
X
WE#  
X
SUPPLY CURRENT  
ISB,ISB1  
MODE  
I/O OPERATION  
High-Z  
Standby  
High-Z  
ISB,ISB1  
X
L
X
X
Output Disable  
Read  
High-Z  
ICC,ICC1  
L
H
H
H
DOUT  
ICC,ICC1  
L
H
L
H
Write  
DIN  
ICC,ICC1  
L
H
X
L
Note: H = VIH, L = VIL, X = Don't care.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
3
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