®
LY61L12816
Rev. 1.2
128K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY61L12816 is a 2,087,152-bit low power
CMOS static random access memory organized as
131,072 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY61L12816 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY61L12816 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 10/12/15/20/25ns
Very low power consumption:
Operating current(Normal version):
200/180/150/110/90mA(TYP.)
Operating current(15/20/25ns LL version):
45/40/35mA(TYP.)
Standby current(Normal version):
0.5mA(TYP.)
Standby current(15/20/25ns LL version):
20µA(TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY61L12816
LY61L12816
LY61L12816(LL)
Operating
Temperature
0 ~ 70℃
0 ~ 70℃
0 ~ 70℃
Vcc Range
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
Speed
10/12ns
15/20/25ns
15/20/25ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
0.5mA
200/180mA
0.5mA
150/110/90mA
20µA(LL)
45/40/35mA(LL)
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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