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LY61L1024E 参数 Datasheet PDF下载

LY61L1024E图片预览
型号: LY61L1024E
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位高速CMOS SRAM [128K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 211 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY61L1024
Rev. 2.2
128K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY61L1024 is a 1,048,576-bit low power CMOS
static random access memory organized as 131,072
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY61L1024 is well designed for very high speed
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY61L1024 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 10/12/15ns
Low power consumption:
Operating current : 75/70/65mA (TYP.)
Standby current : 0.6mA (TYP.)
1μA (TYP.) LL -version
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 32-pin 300 mil SOJ
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
PRODUCT FAMILY
Product
Family
LY61L1024
LY61L1024
LY61L1024(E)
LY61L1024(E)
LY61L1024(LL)
LY61L1024(LL)
LY61L1024(LLE)
LY61L1024(LLE)
Operating
Temperature
0 ~ 70℃
0 ~ 70℃
-20 ~ 80℃
-20 ~ 80℃
0 ~ 70℃
0 ~ 70℃
-20 ~ 80℃
-20 ~ 80℃
Vcc Range
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
Speed
10ns
12/15ns
10ns
12/15ns
10ns
12/15ns
10ns
12/15ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
0.6mA
75mA
0.6mA
70/65mA
0.6mA
75mA
0.6mA
70/65mA
1µA
75mA
1µA
70/65mA
1µA
75mA
1µA
70/65mA
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
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