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LY61L1024 参数 Datasheet PDF下载

LY61L1024图片预览
型号: LY61L1024
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位高速CMOS SRAM [128K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 211 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.2  
ABSOLUTE MAXIMUN RATINGS*  
PARAMETER  
SYMBOL  
VT1  
RATING  
-0.5 to 4.6  
-0.5 to VCC+0.5  
0 to 70(C grade)  
-20 to 80(E grade)  
-65 to 150  
1
UNIT  
V
Voltage on VCC relative to VSS  
Voltage on any other pin relative to VSS  
VT2  
V
Operating Temperature  
TA  
Storage Temperature  
Power Dissipation  
DC Output Current  
TSTG  
PD  
W
IOUT  
50  
mA  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
TRUTH TABLE  
CE#  
H
CE2  
X
OE#  
X
WE#  
X
SUPPLY CURRENT  
MODE  
I/O OPERATION  
High-Z  
ISB,ISB1  
ISB,ISB1  
ICC  
Standby  
High-Z  
X
L
X
X
Output Disable  
Read  
High-Z  
L
H
H
H
DOUT  
ICC  
L
H
L
H
Write  
DIN  
ICC  
L
H
X
L
Note: H = VIH, L = VIL, X = Don't care.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
3
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