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LY61L5128GL-25LLET 参数 Datasheet PDF下载

LY61L5128GL-25LLET图片预览
型号: LY61L5128GL-25LLET
PDF下载: 下载PDF文件 查看货源
内容描述: [512K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 15 页 / 325 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY61L5128  
512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.4  
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)  
tWC  
Address  
tAW  
CE#  
tCW  
tAS  
tWP  
tWR  
WE#  
Dout  
Din  
tWHZ  
TOW  
High-Z  
(4)  
(4)  
tDW  
tDH  
Data Valid  
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)  
tWC  
Address  
tAW  
CE#  
tAS  
tWR  
tCW  
tWP  
WE#  
Dout  
Din  
tWHZ  
High-Z  
(4)  
tDW  
tDH  
Data Valid  
Notes :  
1.WE#, CE# must be high during all address transitions.  
2.A write occurs during the overlap of a low CE#, low WE#.  
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be  
placed on the bus.  
4.During this period, I/O pins are in the output state, and input signals must not be applied.  
5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.  
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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