®
LY61L5128
512K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
FEATURES
GENERAL DESCRIPTION
The LY61L5128 is a 4,194,304-bit low power CMOS
static random access memory organized as 524,288
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
Fast access time : 10/12/15/20/25ns
Very low power consumption:
Operating current(Normal version):
180/160/140/80/70mA(MAX.)
Standby current:
12mA(MAX. for 10/12/15ns)
5mA(MAX. for 20/25ns)
The LY61L5128 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
100 A( (MAX. for 20/25ns LL version)
µ
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
The LY61L5128 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
44-pin 400 mil TSOP-II
36-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Power Dissipation
Speed
Product
Family
LY61L5128
Operating
Temperature
0 ~ 70℃
Vcc Range
Standby(ISB1,MAX.) Operating(Icc,MAX.)
3.15/3.0 ~ 3.6V 10/12/15ns
3.15/3.0 ~ 3.6V 10/12/15ns
3.15/3.0 ~ 3.6V 10/12/15ns
12mA
12mA
12mA
5mA
180/160/140mA
180/160/140mA
180/160/140mA
80/70mA
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
LY61L5128(E)
LY61L5128(I)
LY61L5128
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
20/25ns
20/25ns
20/25ns
20/25ns
20/25ns
20/25ns
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
LY61L5128(E)
LY61L5128(I)
LY61L5128(LL)
LY61L5128(LLE)
LY61L5128(LLI)
5mA
80/70mA
5mA
80/70mA
100µA
100µA
100µA
80/70mA
-20 ~ 80℃
-40 ~ 85℃
80/70mA
80/70mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
LYONTEK [ Lyontek Inc. ]
