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LY61L51216AML-8I 参数 Datasheet PDF下载

LY61L51216AML-8I图片预览
型号: LY61L51216AML-8I
PDF下载: 下载PDF文件 查看货源
内容描述: [512K X 16 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 300 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY61L51216A  
512K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.3  
CAPACITANCE (TA = 25, f = 1.0MHz)  
PARAMETER  
Input Capacitance  
Input/Output Capacitance  
SYMBOL  
MIN.  
-
-
MAX  
8
10  
UNIT  
pF  
pF  
CIN  
CI/O  
Note : These parameters are guaranteed by device characterization, but not production tested.  
AC TEST CONDITIONS  
speed  
8ns/10/12ns  
0.2V to Vcc-0.2V  
3ns  
Input Pulse Levels  
Input Rise and Fall Times  
Input and Output Timing Reference Levels 1.5V  
CL = 30pF + 1TTL,  
IOH/IOL = -4mA/8mA  
Output Load  
AC ELECTRICAL CHARACTERISTICS  
(1) READ CYCLE  
LY61L51216A-8 LY61L51216A-10 LY61L51216A-12  
MIN. MAX. MIN. MAX. MIN. MAX.  
PARAMETER  
SYM.  
UNIT  
Read Cycle Time  
Address Access Time  
Chip Enable Access Time  
Output Enable Access Time  
Chip Enable to Output in Low-Z  
Output Enable to Output in Low-Z  
Chip Disable to Output in High-Z  
Output Disable to Output in High-Z  
Output Hold from Address Change  
LB#, UB# Access Time  
tRC  
tAA  
8
-
-
-
8
8
4.5  
-
-
3
3
-
10  
-
-
-
10  
10  
4.5  
-
-
4
4
-
12  
-
-
-
12  
12  
5
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tACE  
tOE  
tCLZ  
tOLZ  
tCHZ  
tOHZ  
tOH  
tBA  
-
-
-
*
*
*
*
2
0
-
-
2
-
2
0
-
-
2
-
3
0
-
-
2
-
-
5
5
-
5
5
-
4.5  
3
-
4.5  
4
-
LB#, UB# to High-Z Output  
LB#, UB# to Low-Z Output  
tBHZ  
tBLZ  
*
*
-
0
-
0
-
0
(2) WRITE CYCLE  
PARAMETER  
LY61L51216A-8 LY61L51216A-10 LY61L51216A-12  
MIN. MAX. MIN. MAX. MIN. MAX.  
SYM.  
UNIT  
Write Cycle Time  
tWC  
tAW  
tCW  
tAS  
tWP  
tWR  
tDW  
tDH  
8
6.5  
6.5  
0
6.5  
0
5
0
2
-
-
-
-
-
-
-
-
-
-
3
-
10  
8
8
0
8
0
6
0
2
-
-
-
-
-
-
-
-
-
-
4
-
12  
10  
10  
0
10  
0
7
0
2
-
-
-
-
-
-
-
-
-
-
5
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Valid to End of Write  
Chip Enable to End of Write  
Address Set-up Time  
Write Pulse Width  
Write Recovery Time  
Data to Write Time Overlap  
Data Hold from End of Write Time  
Output Active from End of Write  
Write to Output in High-Z  
LB#, UB# Valid to End of Write  
tOW  
tWHZ  
tBW  
*
*
6.5  
8
10  
*These parameters are guaranteed by device characterization, but not production tested.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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