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LY61L2568ML-20IT 参数 Datasheet PDF下载

LY61L2568ML-20IT图片预览
型号: LY61L2568ML-20IT
PDF下载: 下载PDF文件 查看货源
内容描述: [256K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 215 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY61L2568  
256K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.0  
FEATURES  
GENERAL DESCRIPTION  
The LY61L2568 is a 2,097,152-bit low power CMOS  
static random access memory organized as 262,144  
words by 8 bits. It is fabricated using very high  
performance, high reliability CMOS technology. Its  
standby current is stable within the range of  
operating temperature.  
„ Fast access time : 20/25ns  
„ Very low power consumption:  
Operating current(Normal version):  
110/90mA(TYP.)  
Operating current(20/25ns LL version):  
40/35mA(TYP.)  
Standby current(Normal version):  
0.5mA(TYP.)  
Standby current(20/25ns LL version):  
The LY61L2568 is well designed for very low power  
system applications, and particularly well suited for  
battery back-up nonvolatile memory application.  
10 A(TYP.)  
µ
„ Single 3.3V power supply  
„ All inputs and outputs TTL compatible  
„ Fully static operation  
The LY61L2568 operates from a single power  
supply of 3.3V and all inputs and outputs are fully  
TTL compatible  
„ Tri-state output  
„ Data retention voltage : 2.0V (MIN.)  
„ Green package available  
„ Package : 44-pin 400 mil TSOP-II  
PRODUCT FAMILY  
Power Dissipation  
Speed  
Product  
Family  
LY61L2568  
LY61L2568(I)  
LY61L2568(LL)  
LY61L2568(LLI)  
Operating  
Temperature  
0 ~ 70  
Vcc Range  
Standby(ISB1,TYP.) Operating(Icc,TYP.)  
3.0 ~ 3.6V  
3.0 ~ 3.6V  
3.0 ~ 3.6V  
3.0 ~ 3.6V  
20/25ns  
20/25ns  
20/25ns  
20/25ns  
0.5mA  
0.5mA  
110/90mA  
110/90mA  
-40 ~ 85℃  
0 ~ 70℃  
10µA(LL)  
10µA(LL)  
40/35mA(LL)  
40/35mA(LL)  
-40 ~ 85℃  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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