®
LY61L2568
256K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.0
FEATURES
GENERAL DESCRIPTION
The LY61L2568 is a 2,097,152-bit low power CMOS
static random access memory organized as 262,144
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
Fast access time : 20/25ns
Very low power consumption:
Operating current(Normal version):
110/90mA(TYP.)
Operating current(20/25ns LL version):
40/35mA(TYP.)
Standby current(Normal version):
0.5mA(TYP.)
Standby current(20/25ns LL version):
The LY61L2568 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
10 A(TYP.)
µ
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
The LY61L2568 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Power Dissipation
Speed
Product
Family
LY61L2568
LY61L2568(I)
LY61L2568(LL)
LY61L2568(LLI)
Operating
Temperature
0 ~ 70℃
Vcc Range
Standby(ISB1,TYP.) Operating(Icc,TYP.)
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
20/25ns
20/25ns
20/25ns
20/25ns
0.5mA
0.5mA
110/90mA
110/90mA
-40 ~ 85℃
0 ~ 70℃
10µA(LL)
10µA(LL)
40/35mA(LL)
40/35mA(LL)
-40 ~ 85℃
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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