®
LY61L25616
256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.3
FEATURES
GENERAL DESCRIPTION
The LY61L25616 is a 4,194,304-bit low power
CMOS static random access memory organized as
262,144 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
Fast access time : 10/12/15/20/25ns
Very low power consumption:
Operating current:
180/160/140/80/70mA(MAX.)
Standby current:
12mA(MAX. for 10/12/15ns)
5mA(MAX. for 20/25ns)
The LY61L25616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
100 A( (MAX. for 20/25ns LL version)
µ
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
The LY61L25616 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Power Dissipation
Speed
Product
Family
LY61L25616
Operating
Temperature
0 ~ 70℃
Vcc Range
Standby(ISB1,MAX.) Operating(Icc,MAX.)
3.15/3.0 ~ 3.6V 10/12/15ns
3.15/3.0 ~ 3.6V 10/12/15ns
3.15/3.0 ~ 3.6V 10/12/15ns
12mA
12mA
12mA
5mA
180/160/140mA
180/160/140mA
180/160/140mA
80/70mA
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
LY61L25616(E)
LY61L25616(I)
LY61L25616
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
20/25ns
20/25ns
20/25ns
20/25ns
20/25ns
20/25ns
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
LY61L25616(E)
LY61L25616(I)
LY61L25616(LL)
LY61L25616(LLE)
LY61L25616(LLI)
5mA
80/70mA
5mA
80/70mA
100µA
100µA
100µA
80/70mA
-20 ~ 80℃
-40 ~ 85℃
80/70mA
80/70mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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LYONTEK [ Lyontek Inc. ]
