®
LY61L25616
256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.3
TRUTH TABLE
I/O OPERATION
MODE
CE# OE# WE# LB# UB#
SUPPLY CURRENT
DQ0-DQ7
High – Z
High – Z
High – Z
DOUT
High – Z
DOUT
DIN
High – Z
DIN
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
DOUT
DOUT
High – Z
DIN
Standby
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
H
X
H
H
H
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
ISB1
ICC
Output Disable
Read
Write
ICC
L
L
ICC
L
DIN
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
TYP. *4 MAX.
UNIT
PARAMETER
10/12
15/20/25 3.0
3.15
3.3
3.3
-
-
-
3.6
3.6
VCC+0.3
0.6
V
V
V
V
Supply Voltage
VCC
*1
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIH
VIL
2.2
- 0.3
- 1
*2
ILI
V
V
CC ≧ VIN ≧ VSS
CC ≧ VOUT ≧ VSS,
1
A
µ
ILO
- 1
-
1
A
µ
Output Disabled
IOH = -4mA
IOL = 8mA
Output High Voltage
Output Low Voltage
VOH
VOL
2.4
-
-
-
-
-
-
-
0.4
180
160
140
80
V
V
10
12
15
20
-
-
-
-
-
-
-
-
mA
mA
mA
mA
mA
mA
mA
Cycle time = Min.
CE# = VIL , II/O = 0mA
Other pins at VIL or VIH
Average Operating
Power supply Current
ICC
50
45
-
0.5
20
25
70
10/12/15
20/25
20/25LL
12
Standby Power
Supply Current
CE# ≧VCC - 0.2V,
Others at 0.2V or VCC - 0.2V
ISB1
5*5
100*6
A
µ
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25
5. 1mA for special request
6. 50 A for special request
µ
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
LYONTEK [ Lyontek Inc. ]
