®
LY61L12816
128K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
MIN.
-
-
MAX
8
10
UNIT
pF
pF
CIN
CI/O
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
0.2V to VCC - 0.2V
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
LY61L12816 LY61L12816 LY61L12816 LY61L12816 LY61L12816
-10 -12 -15 -20 -25
PARAMETER
SYM.
UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
tRC
tAA
tACE
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
tBA
10
-
-
-
10
10
5
-
12
-
-
-
12
12
6
-
15
-
-
-
15
15
7
-
20
-
-
-
20
20
8
-
25
-
-
-
25
25
9
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
-
-
*
*
*
*
2
0
-
-
3
-
3
0
-
-
3
-
4
0
-
-
3
-
4
0
-
-
3
-
4
0
-
-
3
-
-
-
-
-
-
5
5
-
5
5
-
6
6
-
6
6
-
7
7
-
7
7
-
8
8
-
8
8
-
9
9
-
9
9
-
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
tBHZ
tBLZ
*
*
-
2
-
3
-
4
-
4
-
4
(2) WRITE CYCLE
PARAMETER
LY61L12816 LY61L12816 LY61L12816 LY61L12816 LY61L12816
-10 -12 -15 -20 -25
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
SYM.
UNIT
Write Cycle Time
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
10
8
8
0
8
0
6
0
2
-
-
-
-
-
-
-
-
-
-
6
-
12
10
10
0
9
0
7
0
3
-
-
-
-
-
-
-
-
-
-
7
-
15
12
12
0
10
0
8
0
4
-
-
-
-
-
-
-
-
-
-
8
-
20
16
16
0
11
0
9
0
5
-
-
-
-
-
-
-
-
-
-
9
-
25
20
20
0
12
0
10
0
6
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
tOW
tWHZ
tBW
*
*
-
20
10
-
8
10
12
16
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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