®
LY61L12816
128K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
TRUTH TABLE
I/O OPERATION
MODE
CE# OE# WE# LB# UB#
SUPPLY CURRENT
DQ0-DQ7
High – Z
High – Z
High – Z
DOUT
High – Z
DOUT
DIN
High – Z
DIN
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
DOUT
DOUT
High – Z
DIN
Standby
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
H
X
H
H
H
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
ISB1
ICC
Output Disable
Read
Write
ICC
L
L
ICC
L
DIN
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
-10/12
MIN.
3.15
3.0
2.2
- 0.3
- 1
TYP. *4 MAX.
UNIT
PARAMETER
Supply Voltage
3.3
3.3
3.6
3.6
V
V
V
V
VCC
-15/20/25
*1
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIH
VIL
-
-
-
VCC+0.3
0.6
*2
ILI
V
V
CC ≧ VIN ≧ VSS
CC ≧ VOUT ≧ VSS,
Output Disabled
IOL = 8mA
1
A
µ
ILO
- 1
-
1
A
µ
Output High Voltage
Output Low Voltage
VOH IOH = -4mA
VOL
2.4
-
-
V
V
-
-
-
-
-
-
-
-
-
-
0.4
250
220
200
150
115
60
200
180
150
110
90
10
12
mA
mA
mA
mA
mA
mA
mA
mA
15
20
25
15LL
20LL
25LL
Cycle time = Min.
CE# = VIL , II/O = 0mA
Others at VIL or VIH
Average Operating
Power supply Current
ICC
45
40
50
35
45
5*5
50*6
mA
CE# ≧VCC - 0.2V
Others at 0.2V or
Normal
-
-
0.5
10
Standby Power
Supply Current
ISB1
15/20/25LL
A
µ
VCC - 0.2V
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25
5. 1mA for special request
6. 20 A for special request
µ
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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