®
LY61L12816
128K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
PIN CONFIGURATION
A4
A3
1
2
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A2
3
A7
A1
4
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
A0
5
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A16
A15
A14
A13
A12
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Vcc
LB# OE# A0
DQ8 UB# A3
DQ9 DQ10 A5
Vss DQ11 NC
A1
A2 NC
A
B
C
D
E
F
DQ11
DQ10
DQ9
DQ8
NC
A4 CE# DQ0
A6 DQ1 DQ2
A7 DQ3 Vcc
Vcc DQ12 NC A16 DQ4 Vss
DQ14 DQ13 A14 A15 DQ5 DQ6
DQ15 NC A12 A13 WE# DQ7
A8
A9
G
H
A10
A11
NC
NC
1
A8
2
A9 A10 A11 NC
3
4
5
6
TSOP II
TFBGA
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
SYMBOL
VT1
RATING
UNIT
V
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
-0.5 to 4.6
VT2
-0.5 to VCC+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
V
℃
Operating Temperature
TA
℃
W
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
1
IOUT
50
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3