LY61L102516A
1024K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.3
DC ELECTRICAL CHARACTERISTICS (VCC=2.7V~3.6V)
SYM.
VCC
TEST CONDITION
MIN.
2.7
2.2
- 0.3
- 1
TYP. *4 MAX.
UNIT
PARAMETER
Supply Voltage
3.3
3.6
VCC+0.3
0.8
V
V
V
*1
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIH
VIL
-
-
-
*2
ILI
VCC ≧ VIN ≧ VSS
VCC ≧ VOUT ≧ VSS,
Output Disabled
1
A
µ
ILO
- 1
-
1
A
µ
Output High Voltage
Output Low Voltage
VOH IOH = -4mA
2.4
-
-
-
-
V
V
VOL
IOL = 8mA
0.4
Average Operating
Power supply
Current
CE# ≤0.2V and CE2≧ VCC-0.2V,
-10
-12
-
-
70
65
120
110
mA
ICC1 other pins at 0.2V or VCC-0.2V,
II/O = 0mA; f=MAX.
mA
mA
Standby Power
Supply Current
Notes:
CE# ≧ VCC - 0.2V;
Other pins at 0.2V or VCC-0.2V.
ISB1
-
4
40
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, lndustry E . Rd.II, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
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