®
LY616416
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.1
TRUTH TABLE
I/O OPERATION
MODE
CE# OE# WE# LB# UB#
SUPPLY CURRENT
DQ0-DQ7
High – Z
High – Z
High – Z
DOUT
High – Z
DOUT
DIN
High – Z
DIN
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
DOUT
DOUT
High – Z
DIN
Standby
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
H
X
H
H
H
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
ISB1
ICC
Output Disable
Read
Write
ICC
L
L
ICC
L
DIN
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
4.5
0.6*Vcc
- 0.3
- 1
TYP. *4 MAX.
UNIT
PARAMETER
Supply Voltage
VCC
5.0
5.5
VCC+0.3
0.8
V
V
V
*1
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIH
VIL
-
-
-
*2
ILI
V
V
CC ≧ VIN ≧ VSS
CC ≧ VOUT ≧ VSS,
Output Disabled
1
A
µ
ILO
- 1
-
1
A
µ
Output High Voltage
Output Low Voltage
VOH IOH = -4mA
2.4
-
-
-
-
V
V
VOL
IOL = 8mA
0.4
Cycle time = Min.
CE# = VIL, II/O = 0mA
Others at VIL or VIH
CE# ≧VCC - 0.2V
Others at 0.2V or VCC-0.2V
15
20
-
-
100
80
140
mA
Average Operating
Power supply Current
ICC
110
mA
mA
A
µ
Standby Power
Supply Current
Notes:
15/20
15/20LL
-
-
0.1
20
3*5
ISB1
100*6
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25
5. 1mA for special request
6. 50 A for special request
µ
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
MIN.
-
-
MAX
8
10
UNIT
pF
pF
CIN
CI/O
Note : These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
LYONTEK [ Lyontek Inc. ]
