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LY6164RL-10Z 参数 Datasheet PDF下载

LY6164RL-10Z图片预览
型号: LY6164RL-10Z
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM,]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 293 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
Rev. 1.0
8K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY6164 is a 65,536-bit high speed CMOS static
random access memory organized as 8,192 words
by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY6164 is well designed for high speed system
applications, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6164 operates from a single power supply
of 5V and all inputs and outputs are fully TTL
compatible
LY6164
FEATURES
Fast access time : 8/10/12/15ns
Low power consumption:
Operating current : 110/100/90/80mA (TYP.)
Standby current : 1mA (TYP.)
Single 5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Lead free and green package available
Package : 28-pin 300 mil SOJ
28-pin 300 mil Skinny P-DIP
28-pin 8mm x 13.4mm STSOP
PRODUCT FAMILY
Product
Family
LY6164
LY6164(E)
LY6164(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
8/10/12/15ns
8/10/12/15ns
8/10/12/15ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
1mA
110/100/90/80mA
1mA
110/100/90/80mA
1mA
110/100/90/80mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A12
DQ0 – DQ7
DECODER
8Kx8
MEMORY ARRAY
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
A0-A12
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
40 Hsuch-Fu Rd., Hsinchu, Taiwan.
TEL: 886-3-5165511
FAX: 886-3-5165522
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
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