®
LY615128
5V 512K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.3
FEATURES
GENERAL DESCRIPTION
The LY615128 is a 4,194,304-bit low power CMOS
static random access memory organized as 524,288
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
Fast access time : 10/12/15ns
Low power consumption:
Operating current: 200/180/150mA (TYP.)
Standby current: 1mA (TYP.)
Single 5V power supply
All inputs and outputs TTL compatible
Fully static operation
The LY615128 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
The LY615128 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
PRODUCT FAMILY
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
Product
Family
LY615128
LY615128(E)
LY615128(I)
Operating
Temperature
0 ~ 70℃
Vcc Range
Speed
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
10/12/15 ns
10/12/15 ns
10/12/15 ns
1mA
1mA
1mA
200/180/150mA
200/180/150mA
200/180/150mA
-20 ~ 80℃
-45 ~ 85℃
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
A0 - A18
Vcc
Vss
DQ0 – DQ7 Data Inputs/Outputs
CE#
WE#
OE#
VCC
VSS
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
512Kx8
MEMORY ARRAY
A0-A18
DECODER
Ground
NC
No Connection
I/O DATA
CIRCUIT
DQ0-DQ7
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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LYONTEK [ Lyontek Inc. ]
