®
LY6112816
5V 128K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
FEATURES
GENERAL DESCRIPTION
The LY6112816 is a 2,097,152-bit low power CMOS
static random access memory organized as 131,072
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
Fast access time : 15/20ns
Low power consumption:
Operating current : 140/110mA(MAX.)
Standby current :
3mA(MAX. for 15/20ns)
100 A( (MAX. for 15/20ns LL version)
µ
Single 5V power supply
All outputs TTL compatible
Fully static operation
The LY6112816 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
The LY6112816 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
PRODUCT FAMILY
Power Dissipation
Speed
Product
Family
LY6112816
LY6112816(E)
LY6112816(I)
LY6112816(LL)
LY6112816(LLE)
LY6112816(LLI)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
Vcc
Range
Standby(ISB1)
3mA(MAX.)
3mA(MAX.)
3mA(MAX.)
100µA(MAX.)
100µA(MAX.)
100µA(MAX.)
Operating(Icc)
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
15/20ns
15/20ns
15/20ns
15/20ns
15/20ns
15/20ns
140/110mA(MAX.)
140/110mA(MAX.)
140/110mA(MAX.)
140/110mA(MAX.)
140/110mA(MAX.)
140/110mA(MAX.)
-20 ~ 80℃
-40 ~ 85℃
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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