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LT65W64JL-25LLT 参数 Datasheet PDF下载

LT65W64JL-25LLT图片预览
型号: LT65W64JL-25LLT
PDF下载: 下载PDF文件 查看货源
内容描述: 8K ×8位高速CMOS SRAM [8K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 334 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY65W64
Rev. 1.1
PARAMETER
Supply Voltage
Input High Voltage
8K X 8 BIT HIGH SPEED CMOS SRAM
MIN.
3.0
2.0
2.4
- 0.5
- 0.5
-1
-1
2.2
-
-
TYP.
3.3
-
-
-
-
-
-
-
-
30
*4
SYMBOL TEST CONDITION
V
CC
V
CC
=3.0~3.6V
*1
V
IH
V
CC
=4.5~5.5V
V
CC
=3.0~3.6V
Input Low Voltage
*2
V
IL
V
CC
=4.5~5.5V
Input Leakage Current
V
CC
V
IN
V
SS
I
LI
Output Leakage
V
CC
V
OUT
V
SS,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -4mA
Output Low Voltage
V
OL
I
OL
= 8mA
Cycle time = Min.
Average Operating
CE# = V
IL
and CE2 = V
IH
,
I
CC
Power supply Current
I
I/O
= 0mA,
Others at V
IL
or V
IH
CE# = V
IH
or CE2 = V
IL
I
SB
Others at V
IL
or V
IH
Standby Power
Supply Current
CE#
V
CC
-0.2V or CE2
0.2V
I
SB1
Others at 0.2V or V
CC
-0.2V
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
MAX.
5.5
V
CC
+0.5
V
CC
+0.5
0.6
0.8
1
1
-
0.4
55
UNIT
V
V
V
V
V
µA
µA
V
V
mA
-
-
0.3
1
5
50
mA
µA
CAPACITANCE
(T
A
= 25
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -4mA/8mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3