MBR2035CT-MBR20150CT
20.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
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Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
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260 C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
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Cases: JEDEC TO-220AB molded plastic
Polarity: As marked
Dimensions in inches and (millimeters)
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR
Symbol
Units
Type Number
2035 2045 2050 2060 2090 20100 20150
CT
35
24
35
CT
45
31
45
CT
50
35
50
CT
60
42
60
CT
90
63
90
CT
100
70
CT
150
105
150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
o
20
20
A
A
I(AV)
IFRM
at T =135 C
C
Peak Repetitive Forward Current (Rated V , Square Wave,
R
o
20KHz) at Tc=135 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
150
A
A
IFSM
IRRM
1.0
0.5
Maximum Instantaneous Forward Voltage at (Note 2)
O
IF=10A, TC=25 C
O
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.99
0.87
1.23
1.10
IF=10A, TC=125 C
O
0.57
0.84
0.72
VF
V
IF=20A, TC=25 C
O
IF=20A, TC=125 C
Maximum Instantaneous Reverse Current @ Tc=25℃
0.1
15
0.1
mA
mA
IR
at Rated DC Blocking Voltage
@ Tc=125℃
10
5.0
Voltage Rate of Change, (Rated V )
R
10,000
V/uS
pF
dV/dt
Typical Junction Capacitance
400
320
Cj
o
Typical Thermal Resistance Per Leg (Note 3)
1.0
2.0
C/W
R
θJC
o
Operating Junction Temperature Range
Storage Temperature Range
-65 to +150
-65 to +175
TJ
C
o
TSTG
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.
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