BAV99W
Switching Diode
SOT-323
Features
For high-speed switching applications
Connected in series
Dimensions in inches and (millimeters)
MARKING: KJG
Maximum Ratings @T
A
=25℃
Parameter
Reverse voltage
Forward current
Forward power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
O
P
D
T
j
T
stg
Limits
75
150
200
150
-65~150
Unit
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V
(BR) R
I
R
Test
conditions
MIN
75
2.5
25
715
855
1000
1250
f=1MHz
2
MAX
UNIT
V
µA
nA
I
R
= 100µA
V
R
=75V
V
R
=20V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0V
Forward voltage
V
F
mV
Diode capacitance
C
D
pF
I
F
=I
R
=10mA
Reveres recovery time
t
rr
I
rr
=0.1×I
R
R
L
=100Ω
4
nS
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mail:lge@luguang.cn
LUGUANG [ Shenzhen Luguang Electronic Technology Co., Ltd ]
