BAV23S
Small Signal Diode
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
2.4
-0.1
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Dimensions in inches and (millimeters)
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
Storage Temperature Range
Operating Junction Temperature
0-0.1
Value
250
200
9.0
3.0
-55 to +150
150
Unit
V
mA
A
A
°C
°C
T
STG
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient*
T
C
= 25°C unless otherwise noted
Parameter
Value
350
357
Unit
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
t
rr
Parameter
Breakdown Voltage
Forward Voltage
Reverse Leakage
Reverse Recovery Time
Conditions
I
R
= 100µA
I
F
= 100mA
I
F
= 200mA
V
R
= 250V
V
R
= 250V, T
A
= 150°C
I
F
= I
R
= 30mA, I
RR
= 3.0mA,
R
L
= 100Ω
Min.
250
Max
1.0
1.25
100
100
50
Units
V
V
V
nA
µA
ns
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