BAS85
Silicon Schottky Barrier Diode
MINI MELF
Features
For general applications
Low turn-on voltage
PN junction guard ring
Mechanical Data
Dimension in millimeters
Glass case
Weight: 0.05g (approx)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
Cambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristic
Continuous reverse voltage
Forward continuous current*
Peak forward current*
Surge forward current*
Power dissipation*
Junction temperature
Operating temperature range
Storage temperature range
@ tp = 1s
@ T
A
= 65°C
Symbol
V
R
I
F
I
FM
I
FSM
P
tot
T
j
T
A
T
STG
Value
30
200
300
600
200
125
-65 to +125
-65 to +150
Unit
V
mA
mA
mA
mW
°C
°C
°C
Electrical Characteristics
Characteristic
Reverse breakdown voltage
@ T
j
= 25°C unless otherwise specified
Symbol
V
(BR)R
Min
30
Typ
—
Max
—
Unit
V
10
mA
pulses
* Valid provided that electrodes are kept at ambient temperature.
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