1N60P
Small Signal Schottky Diodes
VOLTAGE RANGE:
45 V
CURRENT: 0.1 A
Features
Metal s illicon junction m ajority carrier conduction
High current capability,Low forward voltage drop
Extrem ely low revers e current I
R
Ultra s peed s witching characteris tics
Sm all tem perature coefficient of forward
f
characteris tics
Satis factory wave detection efficiency
For us e in RECORDER. TV. RADIO. TELEPHONE
as detectors ,s uper high s peed s witching circuits ,
s m all current rectifier
DO - 35(GLASS)
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Mechanical Data
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Parameters
Repetitive peak reverse voltage
Forw ard continuous current
Peak f orw ard surge current (t=1s)
Storage and junction temperature range
Maximum lead temperature f or soldering during 10s at 4mm f rom case
Symbols
V
RRM
T
A
=25
I
F
I
FSM
T
STG
/T
J
T
L
Value
1N60P
45
50
500
XX-
55 ---- + 125
230
UNITS
V
mA
mA
ELECTRICAL CHARACTERISTICS
Parameters
Symbols
Test Conditions
I
F
=1m A
Forw ard voltage
Min.
Value
Typ.
0.24
0.65
0.5
6.0
60.0
Max.
0.5
UNITS
V
F
I
F
=200m A
1.0
1.0
V
Reverse current
Junction capacitance
Detection ef f iciency (See FIG. 4)
Reverse recovery time
Thermal resistance junction to ambient
I
R
C
J
V
R
=15V
V
R
=10V f=1MHz
V
l
=3V f=30MHz
C
L
=10pF R
L
=3.8K
A
pF
%
t
rr
R
θ
JA
I
F
=I
R
=1m A I
rr
=1m A R
C
=100
400
1.0
ns
/W
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