1N5913A-1N5956A
Zener Diodes
POWER DISSIPATION: 1.5W
DO - 41
Features
Silicon planar power zener diodes
No suffix indicates a
±
20% tolerance on nominal Vz.
Suffix "A" denotes a
±10%,Suffix
"B" denotes a
±
5%,
Suffix "C" denotes a
±
2%,Suffix "D" denotes a
±
1%.
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
Mechanical Data
Case:DO-41
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight:
0.339 grams
Dimensions in inches and ( millimeters )
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SYMBOL
Zener current (see Table "Characteristics")
VALUE
UNIT
Pow er dissipation at T
amb
=25
P
tot
T
J
T
STG
1.5
1)
150
-55---+150
W
Junction temperature
Storage temperature
range
SYMBOL
Thermal resistance junction to
lead
MIN
TYP
MAX
45
1)
1.2
UNIT
/W
V
R
θ
JL
V
F
Forw ard voltage at I
F
=200mA
NOTES:
(1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
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