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1N5819W 参数 Datasheet PDF下载

1N5819W图片预览
型号: 1N5819W
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基二极管 [surface mount schottky barrier diode]
分类和应用: 肖特基二极管
文件页数/大小: 1 页 / 221 K
品牌: LUGUANG [ Shenzhen Luguang Electronic Technology Co., Ltd ]
   
1N5819W
surface mount schottky barrier diode
SOD-123
FEATURES :
*
*
*
*
*
*
Low Power Loss,
Low Forward Voltage Drop
High Efficiency
High Surge Capability
High Current Capability
Pb / RoHS Free
0.006(0.15)
Typ. Min.
0.022(0.55)
Typ. Min.
0.053(1.35)
Max.
0.152(3.85)
0.140(3.55)
0.112(2.85)
0.100(2.55)
0.010(0.25)
Min.
MECHANICAL DATA :
* Case: SOD-123, Plastic
* Polarity: Cathode Band
0.067(1.70)
0.055(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Absolute Maximum Ratings
(Ta = 25 °C)
Parameter
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage at I
R
= 1 mA
Maximum DC Blocking Voltage
Maximum RMS Reverse Voltage
Maximum Average Forward Current
Non-Repetitive Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC Method)
Power Dissipation
Typical Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
P
tot
R
ӨJA
T
J
T
STG
Value
40
40
40
28
1
25.0
450
222
125
-55 to + 125
Unit
V
V
V
V
A
A
mW
°C/W
°C
°C
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Forward Voltage (Note 1)
(Ta = 25 °C)
Symbol
V
(BR)R
V
F
Test Condition
I
R
= 1.0 mA
I
F
= 0.1 A
I
F
= 1.0 A
I
F
= 3.0 A
V
R
= 40 V
V
R
= 40 V, Ta = 100 °C
V
R
= 4 V
V
R
= 4 V, Ta = 100 °C
V
R
= 6 V
V
R
= 6 V, Ta = 100 °C
Min.
40
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
10.0
1.0
15.0
1.5
110
Max.
-
0.32
0.45
0.75
1
10.0
50.0
2.0
75.0
3.0
-
Unit
V
V
mA
mA
μA
mA
μA
mA
pF
Reverse Leakage Current
(Note 1)
I
RM
Typical Junction Capacitance
C
J
at VR = 4V, f = 1MHz
Note : (1)
Pulse Test: Pulse width
≤200 μs,
Duty Cycle
≤2%.
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Email:lge@luguang.cn