1N5059-1N5062
Plastic Silicon Rectifier
VOLTAGE RANGE:
200---800
V
CURRENT:
2.0
A
Features
Low cos t
Diffus ed junction
Glass passivated chips
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
DO -
15
Mechanical Data
Cas e: JEDEC DO-15, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces , 0.39gram s
Mounting: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N5059
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=50
1N5060
400
280
400
2.0
1N5061
600
420
600
1N5062
800
560
800
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous
forw ard voltage
Maximum reverse current
@T
J
=125
@1.0A
@
2.5A
@T
A
=25
(Note1)
(Note2)
(Note3)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
50.0
1.2
1.15
5.0
100
4.0
40
45
- 55 ----- + 175
- 55 ----- + 175
A
V
A
µ
s
pF
at rated DC blocking voltage @T
A
=150
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1.Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
K/W
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 0V DC.
3. Thermal resistance from junction to ambient.
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LUGUANG [ Shenzhen Luguang Electronic Technology Co., Ltd ]
