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1N4151 参数 Datasheet PDF下载

1N4151图片预览
型号: 1N4151
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号开关二极管 [Small Signal Switching Diodes]
分类和应用: 小信号开关二极管
文件页数/大小: 3 页 / 188 K
品牌: LUGUANG [ Shenzhen Luguang Electronic Technology Co., Ltd ]
 浏览型号1N4151的Datasheet PDF文件第2页浏览型号1N4151的Datasheet PDF文件第3页  
1N4151
Small Signal Switching Diodes
REVERSE VOLTAGE
: 50 V
CURRENT: 0.15 A
Features
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
DO-35(GLASS)
Mechanical Data
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
25
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
1N4151
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resistive load
@ T
A
=
25
and f 50Hz
Forw ard surge current @ t<1s and T
J
=
25
Pow er dissipation
@ T
A
=
25
Junction temperature
Storage temperature range
UNITS
V
V
mA
mA
mW
V
R
V
RM
I
AV
I
FSM
P
tot
T
J
T
STG
MIN
-
-
-
-
75.0
-
50.0
75.0
150
1)
500.0
500
1)
175
-55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ I
F
=10mA
Leakage current
@ V
R
=50V
@ V
R
=20V T
J
=150
Capacitance
@ V
F
=V
R
=0V
Reverse breakdow n voltage
tested w ith 5μA pulses
Reverse recovery time
from I
F
=10mA to I
R
=10mA to I
R
=1mA
from I
F
=10mA to I
R
=1mA, V
R
=6V. R
L
=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V
RF
=2V
V
F
I
R
I
R
C
J
V
(BR)R
t
rr
R
θJA
ηv
TYP
-
-
-
-
-
-
MAX
1.0
50.0
50.0
2
-
4
2
350
1)
-
UNITS
V
nA
μA
pF
V
ns
ns
K/W
-
0.45
-
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
http://www.luguang.cn
mail:lge@luguang.cn