LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
This device is designd primarily for VHF band switching applications
but is also suitable for use in general-purpose switching circuits.Supplied
in a surface Mount package.
MMBV3401LT1
SILICON PIN
SWITCHING DIODE
•
Rugged Pin Structure Coupled with Wirebond Construction
for Optimum Reliability
•
Low Capacitance—0.7pF Typ at VR=20Vdc
•
Very Low Series Resistance at 100MHz—0.34Ohms(Typ)@IF=10mAdc
3
3
CATHODE
1
ANODE
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward power Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
D
T
J
T
stg
Value
20
200
2.0
+125
–55 to +150
Unit
Vdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV3401LT1=4D
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10µAdc)
Diode Capacitance
(V
R
=20 Vdc)
Series Resistance(figure5)
(I
F
=10mAdc,f=100MHz)
Reverse Voltage Leakage Current
(V
R
=15Vdc)
Symbol
V
(BR)R
C
T
R
S
I
R
Min
35
—
—
—
Typ
—
—
—
—
Max
—
1.0
0.7
0.1
Unit
Vdc
pF
Ω
µAdc
MMBV3401LT1–1/2
LRC [ LESHAN RADIO COMPANY ]
