LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
NPN Silicon
3
COLLECTOR
MMBT3904LT1
3
1
BASE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
V
V
CEO
CBO
EBO
2
EMITTER
1
2
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
P
D
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Base Cutoff Current
( V
CE
= 30 Vdc, V
EB
= 3.0 Vdc, )
Collector Cutoff Current
( V
CE
= 30Vdc, I
EB
= 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
I
BL
I
CEX
—
—
50
50
nAdc
nAdc
V
(BR)EBO
6.0
—
Vdc
V
(BR)CBO
60
—
Vdc
V
(BR)CEO
40
—
Vdc
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