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A8L 参数 Datasheet PDF下载

A8L图片预览
型号: A8L
PDF下载: 下载PDF文件 查看货源
内容描述: 偏置电阻晶体管NPN硅表面贴装,带有单片偏置电阻网络晶体管 [BIAS RESISTOR TRANSISTOR, NPN SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 133 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
LMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
LMUN2211LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
PD, POWER DISSIPATION (MILLIWATTS)
250
1
IC/IB = 10
TA = –25°C
25°C
75°C
200
0.1
150
100
R
θJA
= 625°C/W
0.01
50
0
–50
0
50
100
150
0.001
0
20
40
60
80
TA, AMBIENT TEMPERATURE (5°C)
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
hFE, DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V
TA = 75°C
25°C
–25°C
100
Cob, CAPACITANCE (pF)
3
4
Figure 2. VCE(sat) vs. IC
f = 1 MHz
lE = 0 A
TA = 25°C
2
1
10
1
10
IC, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
75°C
Vin, INPUT VOLTAGE (VOLTS)
10
TA = –25°C
10
Figure 4. Output Capcitance
25°C
VO = 0.2 V
TA = –25°C
25°C
75°C
1
1
0.1
0.01
VO = 5 V
0
1
2
3
4
5
6
7
8
9
10
0.001
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
LMUN2211S–4/11