2SD313
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
!
Complement to 2SB507
TO-220
ABSOLUTE MAXIMUM RATINGS (T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25
o
C
)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
Rating
60
60
7
3
30
150
-50~150
Unit
V
V
V
A
W
C
C
o
o
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
I
CBO
I
EBO
h
FE1
V
CE(sat)
f
T
Test Condition
V
CB
= 60V , I
E
=0
V
EB
= 7V , I
C
=
0
V
CE
= 2V , I
C
=1A
I
C
=2A ,
I
B
=0.2A
V
CE
= 5V ,
I
C
=0.5A
Min
Typ
Max
100
100
320
1.0
8
Unit
µ
A
µ
A
40
V
MHZ
:
.
TEL:+86-13537087568 FAX:+86-769-83220817
lizhenhui
E-mail:lzg0818@126.com
LRC [ LESHAN RADIO COMPANY ]
