LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
2SA1037AK*LT1
3
1
BASE
2
EMITTER
1
2
CASE 318–08, STYLE 6
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
SOT– 23 (TO–236AB)
Value
–50
–60
–6.0
–150
0.2
150
-55 ~+150
Unit
V
V
V
mAdc
W
°C
°C
I
C
P
C
T
j
T
stg
DEVICE MARKING
2SA1037AK*LT1 =G3F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
(I
E
= – 50
µA)
Collector–Base Breakdown Voltage
(I
C
= – 50
µA)
Collector Cutoff Current
(V
CB
= – 60 V)
Emitter cutoff current
(V
EB
= – 6 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= – 50 mA / – 5m A)
DC current transfer ratio
(V
CE
= – 6 V, I
C
= –1mA)
Transition frequency
(V
CE
= – 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
(V
CB
= – 12 V, I
E
= 0A, f =1MHz )
Symbol
V
(BR)CEO
Min
– 50
–6
– 60
—
—
—
120
—
—
Typ
—
—
—
—
—
—
––
140
4.0
Max
—
—
—
– 0.1
– 0.1
-0.5
560
––
5.0
Unit
V
V
V
µA
µA
V
––
MHz
pF
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
M35–1/3
LRC [ LESHAN RADIO COMPANY ]
