LESHAN RADIO COMPANY, LTD.
Switching diode
•
Applications
High speed switching
•
Features
1) Extremely small surface mounting type.
2) High Speed.(trr=1.2ns Typ.)
3) High reliability.
•Construction
Silicon epitaxial planar
2
1SS400
1
EIAJ : SC - 79
JEDEC : SOD - 523
1
CATHODE
2
ANODE
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Peak reverse voltage
V
RM
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Junction temperature
Storage temperature
V
R
I
FM
I
O
I
surge
Tj
T
stg
Limits
90
80
225
100
500
125
– 55 ~ +125
Unit
V
V
mA
mA
mA
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F
I
R
C
T
t
rr
Min.
–
–
–
–
Typ.
–
–
0.72
–
Max.
1.2
0.1
3.0
4
Unit
V
µA
pF
ns
Conditions
I
F
=100mA
V
R
=80V
V
R
=0.5V , f=1MHz
V
R
=6V , I
F
=10mA , R
L
=100
Ω
1SS400–1/2
LRC [ LESHAN RADIO COMPANY ]
