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L9D125G80BG4E10 参数 Datasheet PDF下载

L9D125G80BG4E10图片预览
型号: L9D125G80BG4E10
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5 GB, DDR - SDRAM集成模块 [2.5 Gb, DDR - SDRAM Integrated Module]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 45 页 / 6016 K
品牌: LOGIC [ LOGIC DEVICES INCORPORATED ]
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PreLIMINArY INforMAtIoN L9D125G80BG4  
2.5 Gb, DDR - SDRAM Integrated Module (IMOD)  
REGISTER DEFINITION  
mo D e re g is t e r  
Bu r s t le n g t h  
Bu r s t t y P e  
READ and WRITE accesses to the DDR IMOD  
are burst oriented, with the burst length being  
programmable, as shown in Figure 3. The  
burst length determines the maximum number  
of column locations that can be accessed for a  
given READ or WRITE command. Burst lengths  
of 2, 4, or 8 locations are available for both the  
sequential and interleaved burst types.  
The MODE REGISTER is used to define the spe-  
cific mode of operation of the DDR IMOD. This  
definition includes the selection of a burst length,  
a burst type, a CAS latency as shown in Figure  
2 and the operating mode, as shown in Figure 3.  
The MODE REGISTER is programmed via the  
MODE REGISTER SET command (with BA0=0  
and BA1=0) and will retain the stored information  
until it is programmed again or the device real-  
izes a loss of power (except for bit A8 which is  
self clearing).  
Accesses within a given burst may be pro-  
grammed to be either sequential or interleaved;  
this is referred to as the burst type and is selected  
via bit M3.  
The ordering of accesses within a burst is deter-  
mined by the burst length, the burst type and the  
starting column address, as shown in Table 1.  
Reserved states should not be used, as unknown  
operation or incompatibility issues with future  
version may result.  
Reprogramming the MODE REGISTER will not  
alter the contents of the memory, provided it is  
performed correctly. The MODE REGISTER  
must be loaded (reloaded) when all banks are idle  
and no bursts are in progress, and the controller  
must wait the specified time before initiating the  
subsequent operation. Violating either of these  
requirements will result in unspecified operation.  
MODE REGISTER bits A0-A2 specify the burst  
length, A3 specifies the type of burst (sequential  
or interleaved), A4-A6 specify the CAS latency,  
and A7-A12 specify the operating mode.  
When a READ or WRITE command is issued,  
a block of columns equal to the burst length is  
effectively selected. All accesses for that burst  
take place within this block, meaning that the  
burst will wrap within the block if a boundary is  
reached. The block is uniquely selected by A1-Ai  
when the burst length is set to two; by A2-Ai when  
the burst length is set to four and by A3-Ai when  
the burst length is set to eight. The remaining  
(least significant) address bits are used to select  
the starting location within the block. The pro-  
grammed burst length applies to both the READ  
and WRITE bursts.  
ta B l e 1: Bu r s t DeFinition  
Order of Accesses within a Burst  
Burst Length Starting Column Address Type = Sequential  
Type = Interleaved  
Notes  
1. For a burst length of two, A1-Ai selects  
a two-data-element block; A0 selects the  
starting column within the block.  
2
A0  
0
0-1  
1-0  
0-1  
1-0  
1
2. For a burst length of four, A2-Ai selects  
a four-data-element block; A0-1 selects the  
starting column within the block.  
4
A1  
0
A0  
0
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0
1
3. For a burst length of eight, A3-Ai selects  
an eight-data-element block; A0-2 selects  
the starting column within the block.  
1
0
1
1
8
A2  
0
A1  
0
A0  
0
4. Whenever a boundary of the block is  
reached within a given sequence above,  
the following access wraps within the block.  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
LOGIC Devices Incorporated  
www.logicdevices.com  
High Performance, Integrated Memory Module Product  
7
Feb 2, 2009 LDS-L9D125G80BG4-C