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L9D112G80BG4I6 参数 Datasheet PDF下载

L9D112G80BG4I6图片预览
型号: L9D112G80BG4I6
PDF下载: 下载PDF文件 查看货源
内容描述: 1.2 GB , DDR - SDRAM集成模块 [1.2 Gb, DDR - SDRAM Integrated Module]
分类和应用: 内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 45 页 / 6016 K
品牌: LOGIC [ LOGIC DEVICES INCORPORATED ]
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PreLIMINArY INforMAtIoN L9D112G80BG4  
1.2 Gb, DDR - SDRAM Integrated Module (IMOD)  
REGISTER DEFINITION  
co m m a n D s  
The TRUTH TABLE (below) provides a quick reference of available commands, followed by a written description of each command.  
tr u t h ta B l e  
Notes  
Name (Function)  
CSx\  
RASx\  
CASx\  
WEx\  
ADDR  
H
X
X
X
X
1,9  
Deselect (NOP)  
L
L
L
L
L
L
L
L
H
L
H
H
L
H
H
H
L
X
Bank/Row  
Bank/Column  
Bank/Column  
X
1,9  
1,3  
1,4  
1,4  
1,8  
1,5  
6,7  
1,2  
No Operation (NOP)  
ACTIVE (select bank and activate row)  
READ (select bank and column, and start READ burst)  
WRITE (select bank and column and start WRITE burst)  
BURST TERMINATE  
H
H
H
L
L
H
H
L
L
L
Code  
PRECHARGE (deactivate row in bank or banks)  
AUTO REFRESH or SELF REFRESH (enter soft refresh mode)  
LOAD MODE REGISTER  
L
H
L
X
L
L
OP Code  
tr u t h ta B l e - Dm oP e r a t io n  
Notes  
Name (Function)  
DQMLx, DQMHx  
DQSLx, DQSHx  
L
Valid  
1,10  
WRITE ENABLE  
H
X
1,10  
WRITE INHIBIT  
NOTES:  
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if  
CKE is LOW.  
1. CKE is HIGH for all commands shown except SELF REFRESH.  
2. A0-A12 define the op-code to be written to the selected MODE  
REGISTER BA0, BA1 select either the MODE REGISTER or the  
EXTENDED MODE REGISTER.  
7. Internal REFRESH counter controls row addressing; all inputs and I/Os  
are “Don’t Care” except for CLE.  
8. Applies only to READ bursts with AUTO PRECHARGE disabled. This  
command is undefined (and should not be used) for READ burst with  
AUTO PRECHARGE enabled.  
3. A0-A12 provide row addresses, and BA0, BA1 provide bank addresses.  
4. A0-A8 provide column address; A10 HIGH enables the AUTO  
PRECHARGE feature (non-persistent), while A10 LOW disables the  
AUTO PRECHARGE feature; BA0, BA1 provide bank address.  
9. DESELECT and NOP are functionally interchangeable.  
10. Used to mask WRITE data; provided coincident with the corresponding  
data.  
5. A10 LOW; BA0, BA1 determine the bank being PRECHARGED. A10  
HIGH all banks PRECHARGED and BA0, BA1 or “Don’t Care”.  
De s e l e c t  
The DESELECT function (CSx\=HIGH) prevents new commands from being executed by the DDR IMOD. The IMOD is effectively deselected. Operations  
already in progress are not affected.  
LOGIC Devices Incorporated  
www.logicdevices.com  
High Performance, Integrated Memory Module Product  
12  
Feb 2, 2009 LDS-L9D112G80BG4-C