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L10C11 参数 Datasheet PDF下载

L10C11图片预览
型号: L10C11
PDF下载: 下载PDF文件 查看货源
内容描述: 4/8位可变长度移位寄存器 [4/8-bit Variable Length Shift Register]
分类和应用: 移位寄存器
文件页数/大小: 6 页 / 68 K
品牌: LOGIC [ LOGIC DEVICES INCORPORATED ]
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L10C11  
DEVICES INCORPORATED  
4/8-bit Variable Length Shift Register  
NOTES  
1. Maximum Ratings indicate stress 9. AC specifications are tested with  
specifications only. Functional oper- input transition times less than 3 ns, measured to the 1.5 V crossing point  
11. For the tENA test, the transition is  
ation of these products at values be- output reference levels of 1.5 V (except  
yond those indicated in the Operating  
with datasheet loads. For the tDIS test,  
the transition is m easu red to the  
tDIS test), and input levels of nominally  
Conditions table is not implied. Expo- 0 to 3.0 V. Output loading may be a ±200m V level from the m easu red  
sure to maximum rating conditions for resistive divider which provides for steady-state ou tp u t voltage w ith  
extended periods may affect reliability.  
±10m A load s. The balancing volt-  
age, VTH , is set at 3.5 V for Z-to-0  
specified IOH and IOL at an output  
voltage of VOH min and VOL max  
2. The products described by this speci-  
fication include internal circuitry de-  
signedtoprotect the chipfrom damaging  
substrate injection currents and accumu-  
lations of static charge. Nevertheless,  
conventional precautions should be ob-  
served during storage, handling, and use  
respectively. Alternatively, a diode and 0-to-Z tests, and set at 0 V for Z-  
bridge with upper and lower current to-1 and 1-to-Z tests.  
sources of IOH and IOL respectively,  
12. These parameters are only tested at  
and a balancing voltage of 1.5 V may be  
the high temperature extreme, which is  
used. Parasitic capacitance is 30 pF  
the worst case for leakage current.  
minimum, and may be distributed.  
FIGURE A. OUTPUT LOADING CIRCUIT  
of these circuits in order to avoid expo- This device has high-speed outputs ca-  
sure to excessive electrical stress values. pable of large instantaneous current  
pulses and fast turn-on/ turn-off times.  
3. Thisdeviceprovideshard clamping of  
As a result, care must be exercised in the  
S1  
DUT  
transient undershoot and overshoot. In-  
I
OL  
testing of this device. The following  
measures are recommended:  
put levels below ground or above VCC  
will be clamped beginning at –0.6 V and  
V
TH  
CL  
I
OH  
a. A 0.1 µF ceramic capacitor should be  
VCC + 0.6 V. The device can withstand  
indefinite operation with inputs in the  
installed between VCC and Ground  
range of –0.5 V to +7.0 V. Device opera- leads as close to the Device Under Test  
tion will not be adversely affected, how- (DUT) as possible. Similar capacitors  
FIGURE B. THRESHOLD LEVELS  
t
ENA  
tDIS  
ever, input current levels will be well in  
excess of 100 mA.  
should be installed between device VCC  
and the tester common, and device  
ground and tester common.  
OE  
0
1.5 V  
1.5 V  
Z
Z
3.5V Vth  
4. Actual test conditions may vary from  
those designated but operation is guar-  
anteed as specified.  
1.5 V  
1.5 V  
V
OL*  
0.2 V  
0.2 V  
0
1
Z
Z
b. Ground and VCC supply planes  
must be brought directly to the DUT  
socket or contactor fingers.  
V
OH*  
1
0V Vth  
5. Supply current for a given application  
can be accurately approximated by:  
VOL* Measured VOL with IOH = –10mA and IOL = 10mA  
VOH*  
Measured VOH with IOH = –10mA and IOL = 10mA  
c. Input voltages should be adjusted to  
compensatefor inductiveground and VCC  
noise to maintain required DUT input  
levels relative to the DUT ground pin.  
2
NCV F  
4
where  
10. Each parameter is shown as a min-  
imum or maximum value. Input re-  
quirements are specified from the point  
of view of the external system driving  
the chip. Setup time, for example, is  
specified as a minimum since the exter-  
nal system must supply at least that  
much time to meet the worst-case re-  
quirements ofall parts. Responses from  
the internal circuitry are specified from  
the point of view of the device. Output  
delay, for example, is specified as a  
maximum since worst-case operation of  
any device always provides data within  
that time.  
N = total number of device outputs  
C = capacitive load per output  
V = supply voltage  
F = clock frequency  
6. Tested with all outputs changing ev-  
ery cycle and no load, at a 5 MHz clock  
rate.  
7. Tested with all inputs within 0.1 V of  
VCC or Ground, no load.  
8. These parameters are guaranteed  
but not 100% tested.  
Pipeline Registers  
03/27/2000–LDS.11-L  
4