ZP1000A2100~3000V
Y50ZPD
Chinese Type Rectifier Diodes (Capsule Version)
L i u j in g r e cti fi e r co ., L td .
�½标型
-
普通整流管
(
平板式
)
FEATURES
1). Low forward voltage drop
2). High reverse voltage
3). Hermetic metal cases with ceramic insulators
TYPICAL APPLICATIONS
1). All purpose high power rectifier diodes
2). High power resistance welding equipment
3). Non-controllable and half-controllable
rectifiers
4). Controlled rectifiers
I
F(AV)
V
RRM
I
FSM
I
2
t
2307 A
2100~3000 V
24 KA
2880 10
3
A
2
S
THE MAIN PARAMETERS
SYMBOL
O
TEST CONDITIONS
Mean forward current
Repetitive peak reverse voltage
Repetitive peak current
Surge on-state current
I
2
T for fusing coordination
Threshold voltage
Forward slop resistance
Peak on-state voltage
Reverse recovery current
Reverse recovery time
Recovery charge
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
I
TM
=4500A, F=24KN
I
TM
=2000A, tp=1000
μ
s, di/dt=-20A/
μ
s,V
R
=50V
At 180
°
sine, double side cooled
Clamping force 24.0KN
180 half sine wave 50Hz T
hs
=55
℃
Double side cooled,
T
hs
=130
℃
V
RRM
tp=10ms, V
RSM
= V
RRM
+100V
V
RM
= V
RRM
10ms half sine wave, V
R
=0.6V
RRM
T
j
(
℃
)
160
160
160
160
160
160
160
VALUE
Min
Type
Max
2307
1000
2100
3000
80
24
2880
0.82
0.22
1.81
132
5.2
343
0.022
19
-40
470
26
160
UNIT
A
V
mA
KA
A
2
s*10
3
V
m
Ω
V
A
μ
s
μ
C
℃
/W
KN
℃
g
mm
1/3
I
F(AV)
V
RRM
I
RRM
I
FSM
I
2
t
V
FO
r
F
V
FM
I
rm
t
rr
Q
rr
R
th(j-h)
F
m
T
stg
W
t
Size
95
×
95
×
50
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