SST300S
3). Triggering
Parameters
P
GM
Maximum peak gate power
SST300S
10.0
2.0
3.0
20
5.0
TYP.
I
GT
DC gate current required to trigger
200
100
50
2.5
V
GT
DC gate voltage required to trigger
1.8
1.1
I
GD
DC gate current not to trigger
10
MAX.
-
200
-
-
3
-
mA
T
J
= T
J
max.
V
GD
T
J
T
stg
R
thJC
R
thCS
T
wt
DC gate voltage not to trigger
Max. operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque
Approximate weight
Case style
0.25
-40 to 125
-40 to 150
0.10
0.03
48.5
(425)
535
TO-118
V
℃
℃
K/W
K/W
Nm
(lbf-in)
g
See Outline Table
DC operation
Mounting surface, smooth, flat and greased
Non lubricated threads
V
mA
T
J
= - 40
℃
T
J
= 25
℃
T
J
= 125
℃
T
J
= - 40
℃
T
J
= 25
℃
T
J
= 125
℃
Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated V
DRM
anode-to-cathode applied
Max. required gate trigger
current/voltage are the
lowest value which
will trigger all units 6V
anode-to-cathode applied
Unit
W
A
V
Conditions
T
J
= T
J
max, t
p
≤ 5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤ 5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
Max. peak positive gate current
Max. peak positive gate current
Maximum peak positive gate voltage
Δ
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180
°
120
°
90
°
60
°
30
°
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Sinusoidal conduction
0.011
0.013
0.017
0.025
0.041
Rectangular conduction
0.008
0.014
0.018
0.026
0.042
Units
Conditions
K/W
T
J
= T
J
max.
3/6
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