SKT55
Symbol
V
GT
I
GT
V
GD
I
GD
R
th(j-c)
R
th(j-c)
R
th(j-c)
R
th(c-s)
T
vj
T
stg
V
isol
M
s
a
m
Case
approx.
to heatsink
T
vj
=25
℃
; d.c.
T
vj
=25
℃
; d.c.
T
vj
=130
℃
; d.c.
T
vj
=130
℃
; d.c.
cont.
sin.180
rec.120
Conditions
Values
min.3
min.150
max.0.25
max.10
0.4
0.47
0.53
0.08
-40 ... +130
-55 ... +150
-
10
5*9.81
65
B5
V
V
mA
V
mA
K/W
K/W
K/W
K/W
℃
℃
V~
Nm
m/s
2
g
PERFORMANCE CURVES FIGURE
150
W
.xls-1L
150
W
0.8 0.7
0.9
1.0
0.6
0.5
0.4
R
th(j-a)
.xls-1R
sin. 180
rec. 120
rec. 60 rec. 90
100
rec. 15
rec. 30
rec. 180
cont.
100
1.1
1.2
1.4
1.6
1.8
2
2.5
3
4
K/W
50
P
TAV
50
P
TAV
0
0
0
0
I
TAV
25
50
A
75
T
a
50
100
℃
150
Fig. 1L Power dissipation vs. on-state current
100
A
80
sin. 180
rec. 180
xls-02
Fig. 1R Power dissipation vs. ambient temperature
1000
.xls-03
I
TM
=
500A
200A
100A
50A
20A
cont.
C
60
rec. 120
sin. 120
sin. 90
rec. 90
rec. 60
rec. 30
rec. 15
100
40
sin. 60
sin. 30
20
I
TAV
0
0
sin. 15
Q
rr
T
vj
=130℃
T
C
10
50
100
℃
150
1
-di
T
/dt
10
A/ s
100
Fig. 2 Rated on-state current vs. case temperature
Fig. 3 Recovered charge vs. current decrease
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