SKT50
1
℃
W
0.8
.xls-04
1.0
℃
W
K5 - M5
K3 - M5
K1.1 - M5
K1.1 - M5
R
thca
5.2
℃/W
3.2
℃/W
1.3
℃/W
0.6
℃/W
.xls-05
Z
thjh
Z
(th)p
=Z
(th)t
=Z
(th)z
0.9
6m/s
0.6
Z
thjc
0.8
0.4
θ
360°
180°
120°
90°
60°
30°
15°
Z
(th)z
(K/W)
sin.
rec.
0.7
0.2
Z
(th)t
10
-3
t
10
-2
10
-1
-
0.003
0.004
0.055
0.105
0.225
0.33
0
0.06
0.08
0.105
0.15
0.225
0.33
rec.
0.6
sin.
[R
thjc
]
cont．
=0.57
℃/W
R
thjc
s 10
2
0.6
0° θ
30°
60°
90°
10
0
10
1
120°
150°
180°
Fig. 4 Transient thermal impedance vs. time
150
A
.xls-06
Fig. 5 Thermal resistance vs. conduction angle
400
W
SKN026.xls-1L
typ.
max.
rec.
60
rec. sin.
120 180
rec.
180
300
100
cont.
200
50
T
vj
= 130 25 130 25
℃
100
P
TAV
I
T
0
0 V
T
0.5
1
1.5
V
2
0
0
I
TAV
50
100
A
150
Fig. 6 On-state characteristics
I
T(OV)
I
TSM
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
10
SKT 40
SKT 50
700
1050
Fig. 7 Power dissipation vs. on-state current
.xls-05
I
TSM
(A)
T
vj
=25℃ T
vj
=130℃
600
900
0.V
RRM
1
2
.V
RRM
1.V
RRM
t
10
1
10
2
ms
10
3
Fig. 8 Surge overload curent vs. time
3
2
V
10
1
5
4
3
2
10
0
5
4
3
2
V
G
10
-1
.xls-09
20V; 20
V
GT
75
BSZ
50
25
W
W
(0
.1
m
s)
(0
W
T
vj
=
-40℃
25℃
.5
m
s)
m
s)
(8
130℃
V
GD
I
GD
<
BMZ
I
GT
P
G
(t
p
)
10
-3
I
G
2
3 4 5
10
-2
2
3 4 5
10
-1
2
3 4 5
10
0
2
3 4 5
10
1
2
3 4 5
A 10
2
Fig. 9 Gate trigger characteristics
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