SKT200
Symbol
V
GT
I
GT
V
GD
I
GD
R
th(j-c)
R
th(j-c)
R
th(j-c)
R
th(c-s)
T
vj
T
stg
V
isol
M
s
a
m
Case
approx.
to heatsink
T
vj
=25
℃
; d.c.
T
vj
=25
℃
; d.c.
T
vj
=130
℃
; d.c.
T
vj
=130
℃
; d.c.
cont.
sin.180
rec.120
Conditions
Values
min.3
min.200
max.0.25
max.10
0.16
0.18
0.2
0.03
-40 ... +130
-55 ... +150
-
30
5*9.81
250
B6
V
V
mA
V
mA
K/W
K/W
K/W
K/W
℃
℃
V~
Nm
m/s
2
g
PERFORMANCE CURVES FIGURE
400
W
300
rec. 60
rec. 30
.xls-1L
400
W
300
0.3
0.35
0.4
0.45
0.5
0.25
0.2
0.16
R
th(j-a)
.xls-1R
sin. 180
rec. 120
rec. 90
rec. 180
cont.
200
rec. 15
200
0.6
0.7
0.8
100
P
TAV
0
0
100
P
TAV
I
TAV
0
0
1.0
1.2
1.4
1.6
K/W
50
100
150
A
200
T
a
50
100
℃
150
Fig. 1L Power dissipation vs. on-state current
250
A
200
sin. 180
rec. 120
rec. 180
xls-02
Fig. 1R Power dissipation vs. ambient temperature
1000
.xls-03
I
TM
=
cont.
C
500A
200A
100A
50A
20A
150
sin. 120
sin. 90
rec. 90
rec. 60
100
100
sin. 60
sin. 30
rec. 30
rec. 15
50
I
TAV
0
0
sin. 15
Q
rr
T
vj
=130℃
10
T
C
50
100
℃
150
1
-di
T
/dt
10
A/ s
100
Fig. 2 Rated on-state current vs. case temperature
Fig. 3 Recovered charge vs. current decrease
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