SKT100
0.4
K/W
0.3
.xls-04
0.40
K/W
0.38
.xls-05
θ
380°
180°
120°
90°
60°
30°
15°
Z
(th)z
(K/W)
sin.
rec.
Z
th(j-s)
0.36
K3 - M12
K1.1-M12
K1.1-M12
K0.55-M12
K0.55-M12
R
th(c-s)
0.2
-
0.10
0.13
0.17
0.23
0.33
0.40
0
0.15
0.20
0.23
0.28
0.36
0.40
Z
th(j-c)
0.34
0.32
0.30
3.10 K/W
1.20 K/W
γ
0.40 K/W 6m/s
0.65 K/W
γ
0.25 K/W 6m/s
rec.
0.1
Z
th
0.0
0.001
t 0.01
0.1
Z
(th)p
=Z
(th)t
=Z
(th)z
0.28
R
th(j-c)
10
s
100
0.26
0° θ
R
th(j-c)(cont.)
= 0.25 K/W
sin.
1
30°
60°
90°
120°
150°
180°
Fig. 4 Transient thermal impedance vs. time
400
A
300
.xls-06
Fig. 5 Thermal resistance vs. conduction angle
1000
W
800
rec. 60
.xls-07
sin. 180
rec. 120
rec. 180
cont.
typ.
max.
600
200
400
100
I
T
0
0
V
T
0.5
T
vj
= 25
℃
T
vj
= 130
℃
200
P
TAV
0
2.5
0
I
TAV
100
200
A
300
1
1.5
2
V
Fig. 6 On-state characteristics
2.0
I
T(OV)
I
TSM
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1
t
10
100
ms
I
TSM(25℃)
=1700 A
I
TSM(130℃)
=1500 A
Fig. 7 Power dissipation vs. on-state current
.xls-08
0.V
RRM
0.5.V
RRM
1.V
RRM
1000
Fig. 8 Surge overload curent vs. time
100
V
20V; 20
10
W
(8
.xls-09
15
0
0W
(0
.5
m
W
10
50
(0
.0
m
m
s)
s)
s)
V
GT
BSZ
1
V
GD(130°)
I
GD(130°)
V
G
0.1
0.001
-40℃
T
vj
=
25℃
BMZ
130℃
I
GT
<
P
G
(t
p
)
I
G
0.01
0.1
1
10
A
100
Fig. 9 Gate trigger characteristics
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