欢迎访问ic37.com |
会员登录 免费注册
发布采购

SD600N(R) 参数 Datasheet PDF下载

SD600N(R)图片预览
型号: SD600N(R)
PDF下载: 下载PDF文件 查看货源
内容描述: [可控硅、晶闸管]
分类和应用: 可控硅
文件页数/大小: 5 页 / 756 K
品牌: LIUJING [ 上海柳晶电子电器有限公司 ]
 浏览型号SD600N(R)的Datasheet PDF文件第1页浏览型号SD600N(R)的Datasheet PDF文件第3页浏览型号SD600N(R)的Datasheet PDF文件第4页浏览型号SD600N(R)的Datasheet PDF文件第5页  
SD600N(R)
2). Forward Conduction
Parameters
Max. average forward current
@ Case temperature
Max. average forward current
@ Case temperature
SD600N(R)
04 to 20
400
120
480
100
630
8250
I
FSM
Max. peak, one-cycle forward,
non-repetitive surge current
8640
6940
7270
340
I
2
t
Maximum I
2
t for fusing
311
241
220
I
2
t
Maximum I
2
t for fusing
3400
0.78
0.87
0.35
0.31
1.31
-40 to 180
-55 to 200
V
F(TO)1
Low level value of threshold voltage
V
F(TO)2
High level value of threshold voltage
r
f1
r
f2
V
FM
T
J
T
stg
R
thJC
R
thCS
T
wt
Low level value of forward slope resistance
High level value of forward slope resistance
Max. forward voltage drop
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Max. allowed mounting torque
±
10%
Approximate weight
Case style
25 to 32
600
54
375
100
940
10500
11000
8830
9250
551
503
390
356
5510
0.84
0.88
0.40
0.38
1.44
-40 to 150
-55 to 200
KA
2
s
A
Unit
A
A
A
Conditions
I
F(AV)
I
F(AV)
180
°
conduction, half sine wave
180
°
conduction, half sine wave
DC @ 110
°
C case temperature
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half
wave, Initial
T
J
= T
J
max.
I
F(RMS)
Max. RMS forward current
KA
2
s t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 1500A, T
J
= 25
, t
p
= 10ms sinusoidal wave
m
Ω
V
0.1
0.04
50
454
B-8
K/W
Nm
g
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
unleaded device
See Outline Table
Δ
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180
°
120
°
90
°
60
°
30
°
Sinusoidal conduction
0.012
0.014
0.017
0.025
0.042
Rectangular conduction
0.008
0.014
0.019
0.026
0.042
Units
Conditions
K/W
T
J
= T
J
max.
www.china-liujing.com
2/4