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KS600A500-1800V Y35KSE 参数 Datasheet PDF下载

KS600A500-1800V Y35KSE图片预览
型号: KS600A500-1800V Y35KSE
PDF下载: 下载PDF文件 查看货源
内容描述: [可控硅、晶闸管]
分类和应用: 可控硅
文件页数/大小: 2 页 / 362 K
品牌: LIUJING [ 上海柳晶电子电器有限公司 ]
 浏览型号KS600A500-1800V Y35KSE的Datasheet PDF文件第2页  
KS600A500~1800V
Y35KSE
Chinese Type Triac Thyristors (Capsule Version)
L i u j in g r e cti fi e r co ., L td .
�½标型
-
双向晶闸管
(
平板式
)
FEATURES
1). Two anti-paralled thyristors on one Si-wafer
2). Hermetic metal cases with ceramic insulators
3). Capsule packages for doubble sided cooling
TYPICAL APPLICATIONS
1). High power industrical and
power transmissior
2). DC and AC motor control
3). AC controllers
I
T(RMS)
V
DRM
/V
RRM
I
TSM
I
2
t
1080A
500~1800V
7.6 KA
288 A
2
s*10
3
THE MAIN PARAMETERS
SYMBOL
I
T(RMS)
I
T(RMS)
V
DRM
I
DRM
I
TSM
I
2
t
V
TO
r
T
V
TM
dv/dt
di/dt
I
GT
V
GT
I
H
R
th(j-h)
F
m
T
stg
W
t
Size
CHARACTERISTIC
RMS current
RMS current
Repetitive peak reverse voltage
Repetitive peak current
Surge on-state current
I
2
T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Gate trigger current
Gate trigger voltage
Holding current
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
95
×
95
×
50
double side cooled
Clamping force 15KN
5.3
-40
260
V
A
=12V
I
A
=1A
25
I
TM
=900A, F=15KN
V
DM
=0.67V
DRM
V
DM
= 67%V
DRM
to 1000A, Gate pulse
t
r
≤0.5
μ
s I
GM
=1.5A Repetitive
TEST CONDITIONS
50Hz sine wave
Double side cooled, T
hs
=55
50Hz sine wave
Double side cooled, T
hs
=96
V
DRM
tp=10ms, V
DSM
= V
DRM
+100V
V
RM
= V
RRM
10ms half sine wave, V
R
=0.6V
RRM
T
j
(
)
125
125
125
125
125
125
125
125
125
20
0.8
20
500
VALUE
Min
Type
Max
1080
600
1800
40
7.6
288
0.84
1.01
1.75
50
50
300
3.0
300
0.035
20
140
UNIT
A
A
V
mA
KA
A
2
s*10
3
V
m
Ω
V
V/
μ
s
A/
μ
s
mA
V
mA
/W
KN
g
mm
1/2
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