KP500A400~1000V
Y35KPC
Chinese Type Phase Control Thyristors (Capsule Version)
L i u j in g r e cti fi e r co ., L td .
�½标型
-
普通晶闸管
(
平板式
)
FEATURES
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
TYPICAL APPLICATIONS
1). AC controllers
2). DC and AC motor control
3). Controlled rectifiers
I
T(AV)
V
DRM
/V
RRM
I
TSM
I
2
t
1076A
400~1000V
11 KA
605 10
3
A
2
S
THE MAIN PARAMETERS
SYMBOL
I
T(AV)
V
DRM
V
RRM
I
DRM
I
RRM
I
TSM
I
2
t
V
TO
r
T
V
TM
dv/dt
di/dt
I
rm
t
rr
Q
rr
I
GT
V
GT
I
H
V
GD
R
th(j-h)
F
m
T
stg
W
t
Size
CHARACTERISTIC
Mean on-state current
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Surge on-state current
I
2
T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Reverse recovery current
Reverse recovery time
Recovery charge
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
95
×
95
×
50
1/3
O
TEST CONDITIONS
T
j
(
℃
)
VALUE
Min Type
Max
1076
500
UNIT
A
V
mA
KA
A s*10
3
V
m
Ω
V
V/
μ
s
A/
μ
s
A
μ
s
μ
C
mA
V
mA
V
℃
/W
KN
℃
g
2
180 half sine wave 50Hz T
hs
=55
℃
125
Double side cooled,
T
hs
=102
℃
V
DRM
&V
RRM
,tp=10ms
V
DSM
&V
RSM
= V
DRM
&V
RRM
+100V
V
D
= V
DRM
V
R
= V
RRM
10ms half sine wave
V
R
=0.6V
RRM
125
125
125
125
I
TM
=1500A, F=15KN
V
DM
=0.67V
DRM
V
DM
= 67%V
DRM
to1300A,
Gate pulse t
r
≤0.5
μ
s I
GM
=1.5A
I
TM
=700A,tp=1000
μ
s,
di/dt=-20A/
μ
s,
VR=50V
V
A
=12V, I
A
=1A
V
DM
=0.67V
DRM
At 180
°
sine, double side cooled
Clamping force 15KN
10
-40
260
125
125
125
3100
1000
40
11.0
605
0.80
0.40
1.80
1000
500
137
15
1027
250
2.5
200
0.035
20
140
125
35
0.8
20
0.3
25
125
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LIUJING [ 上海柳晶电子电器有限公司 ]
