欢迎访问ic37.com |
会员登录 免费注册
发布采购

KG1000A800-1400V Y55KAD 参数 Datasheet PDF下载

KG1000A800-1400V Y55KAD图片预览
型号: KG1000A800-1400V Y55KAD
PDF下载: 下载PDF文件 查看货源
内容描述: [可控硅、晶闸管]
分类和应用: 可控硅
文件页数/大小: 3 页 / 445 K
品牌: LIUJING [ 上海柳晶电子电器有限公司 ]
 浏览型号KG1000A800-1400V Y55KAD的Datasheet PDF文件第2页浏览型号KG1000A800-1400V Y55KAD的Datasheet PDF文件第3页  
KG1000A800~1400V
Y55KAD
Chinese Type High Frequency Thyristors (Capsule Version)
L i u j in g r e cti fi e r co ., L td .
�½标型
-
高频晶闸管
(
平板式
)
FEATURES
1). Interdigitated amplifying gates
I
T(AV)
V
DRM
/V
RRM
2). Fast turn-on and high di/dt
t
q
3). Low switching losses
I
TSM
4). Short turn-off time
5). Hermetic metal cases with ceramic insulators
1307A
800~1400V
20~28
μ
s
18KA
TYPICAL APPLICATIONS
1). Inductive heating
2). Electronic welders
3). Self-commutated inverters
4). AC motor speed control
5). General power switching applications
THE MAIN PARAMETERS
SYMBOL
I
T(AV)
V
DRM
V
RRM
I
DRM
I
RRM
I
TSM
I
2
t
V
TO
r
T
V
TM
dv/dt
di/dt
I
rm
t
rr
Q
rr
tq
I
GT
V
GT
I
H
V
GD
R
th(j-h)
F
m
T
stg
W
t
Size
CHARACTERISTIC
Mean forward current
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Surge on-state current
I
2
T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Reverse recovery current
Reverse recovery time
Recovery charge
Circuit commutated turn-off time
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
TEST CONDITIONS
180
°
half sine wave 50Hz
Double side cooled, T
hs
=55
V
DRM
&V
RRM
,tp=10ms
V
DSM
&V
RSM
= V
DRM
&V
RRM
+100V
V
D
= V
DRM
V
R
= V
RRM
10ms half sine wave
V
R
=0.6V
RRM
T
j
(
)
125
125
125
125
125
I
TM
=3000A, F=26KN
V
DM
=0.67V
DRM
V
DM
= 67%V
DRM
to2500A,
Gate pulse tr ≤0.5
μ
s I
GM
=1.5A
I
TM
=1300A,tp=1000
μ
s,
di/dt=-20A/
μ
s,
VR=50V
I
TM
=1300A,tp=1000
μ
s, V
R
=50V
dv/dt=30V/
μ
s ,di/dt=-20A/
μ
s
V
A
=12V, I
A
=1A
V
DM
=67%V
DRM
At 180
°
sine, double side cooled
Clamping force 26KN
125
125
125
125
125
25
125
20
30
0.8
20
0.3
60
3.5
105
800
VALUE
Min Type
Max
1307
1400
100
18
1620
1.63
0.25
2.38
200
1500
UNIT
A
V
mA
KA
A s*10
3
V
m
Ω
V
V/
μ
s
2
A/
μ
s
A
μ
s
μ
C
μ
s
mA
V
mA
V
/W
KN
g
mm
1/3
120
28
300
3.0
400
0.022
21
-40
620
160
×
145
×
65
30
140
www.china-liujing.com