K50RIA
2). Forward Conduction
Parameters
Max. average forward current
@ Case temperature
K50RIA
10 to 120 140 to 160
50
94
80
1430
I
TSM
Max. peak, one-cycle forward,
non-repetitive surge current
1490
1200
1255
10.18
I
2
t
Maximum I
2
t for fusing
9.30
7.20
6.56
I
2
√
t
Maximum I
2
√
t for fusing
101.8
0.94
1.08
4.08
3.34
1.60
200
400
50
90
80
1200
1257
1010
1057
7.21
6.58
5.10
4.65
72.1
1.02
1.17
4.78
3.97
1.78
KA
2
√
s
V
KA
2
s
A
Unit
A
℃
A
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half
wave, Initial
T
J
= T
J
max.
Conditions
I
T(AV)
180
°
conduction, half sine wave
I
T(RMS)
Max. RMS forward current
t = 0.1 to 10ms, no voltage reapplied
(16.7%x
π
x I
F(AV)
<I<
π
x I
F(AV)
), T
J
=T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
<I<
π
xI
F(AV)
), T
J
=T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 50A, T
J
= 25
℃
t
p
= 10ms sine pulse
T
J
= 25
°
C, anode supply 12V
resistive load
T
C
= 125
℃
, V
DM
= rated V
DRM
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of forward slope resistance
High level value of forward slope resistance
Max. forward voltage drop
Maximum holding current
Typical latching current
Max. rate of rise of turned-on current
di/dt
VDRM ≤ 600V
VDRM ≤ 1600V
m
Ω
V
mA
200
100
A/
μ
s
Gate pulse = 20V, 15
Ω
, t
p
= 6
μ
s,
tr = 0.1
μ
s max. I
TM
= (2x rated di/dt) A
T
C
= 25
℃
V
DM
= rated V
DRM
I
TM
= 10A dc
t
d
Typical delay time
0.9
μ
s
resistive circuit Gate pulse = 10V, 15
Ω
source, t
p
= 20
μ
s
TC = 125
℃
, ITM = 50A, reapplied dv/dt
= 20V/
μ
s dir/dt = -10A/
μ
s, VR=50V
t
q
Typical turn-off time
110
dv/dt
Max. critical rate of rise of
off-state voltage
200
500(*)
V/
μ
s
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
(*) Available with: dv/dt = 1000V/
μ
s, to complete code add S90 i.e. K50RIA120S90.
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